INFRARED PHOTOTRANSISTOR 900NM 5MM VCEO=30V

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Angle of Half Sensitive NTE30051 2θ1/2 IC = 1mA, Ee = 0mW/cm2 − 20 − Degree NTE30052 − 38 − Degree Collector−Emitter Voltage VCEO IC = 1mA, Ee = 0mW/cm2 30 − − V Emitter−Collector Voltage VECO IC = 100uA, Ee = 0mW/cm2 − 5 − V Collector−Emitter Saturation Voltage VCES IC = 0.5mA, Ib = 100uA − − 0.4 V Collector Current (Saturation) NTE30051 IC VCE = 5V, Ee = 0.5mW/cm2 0.2 1.5 − mA NTE30052 0.8 3.0 12 mA Collector Dark Current ICEO VCE = 20V, Ee = 0mW/cm2 − − 100 nA Rise Time tr VCE = 5V, IC = 1mA, RL = 1000Ω − 15 − µs Fall Time tf VCE = 5V, IC = 1mA, RL = 1000Ω − 15 − µs Peak Wavelength λp − 900 − nm Sensitivity Wavelength λ 500 − 1100 nm